Optoelectronic semiconductor device and method for manufacturing the same
US11990576B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Feb 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
An optoelectronic semiconductor device may include a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers being stacked one above the other. The device may include a first contact structure and a contact layer. The device may include a separating layer arranged over a side of the contact layer, and a current spreading layer arranged over a side of the separating layer facing away from the contact layer. The first contact structure may be connected to the contact layer via the current spreading layer and the separating layer. A layer stack may include the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity. The separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.