Semiconductor device and method of coating a semiconductor wafer with high viscosity liquid photoresist using N2 purge
US11994801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2021 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Oct 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.