Patent · US Active

Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

US11996131B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventors

Johannes Ocker · Dresden, DE
Foroozan Sarah Koushan · San Jose, US

Key dates

Filing date	Jan 4, 2022
Grant date	May 28, 2024
Priority date	—
Expiry date	Apr 25, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/2293
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Various aspects relate to a method of manufacturing a memory cell, the method including: forming a memory cell, wherein the memory cell comprises a spontaneously-polarizable memory element, wherein the spontaneously-polarizable memory element is in an as formed condition; and carrying out a preconditioning operation of the spontaneously-polarizable memory element to bring the spontaneously-polarizable memory element from the as formed condition into an operable condition to allow for a writing of the memory cell after the preconditioning operation is carried out.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.