Non-volatile memory cell with multiple ferroelectric memory elements (FMEs)
US11996144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2022 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jun 15, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0072
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory (NVM) is formed of memory cells each having multiple ferroelectric memory elements (FMEs). Each FME stores data in relation to an electrical polarity of a recording layer formed of ferroelectric or anti-ferroelectric material. Each multi-FME memory cell is coupled to a set of external control lines activated by a control circuit in a selected order to perform program and/or read operations upon the FMEs. The FMEs may share a nominally identical construction or may have different constructions. Data are programmed and written responsive to the respective program/read responses of the FMEs. Constructions can include ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs). The NVM may form a portion of a data storage device, such as a solid-state drive (SSD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.