System and method for introducing aluminum to an ion source
US11996281B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2023 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jun 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J7/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.