Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996292B2 · kind B2 · utility
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2,212References
30Claims
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Key dates
| Filing date | Oct 19, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Feb 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.