ESD diode solution for nanoribbon architectures

US11996403B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Nidhi Nidhi · Hillsboro, US
• Rahul Ramaswamy · Portland, US
• Walid M. Hafez · Portland, US
• Hsu-Yu Chang · Hillsboro, US
• Ting Chang · Portland, US
• Babak Fallahazad · Portland, US
• Tanuj Trivedi · Hillsboro, US
• Jeong Dong Kim · Scappoose, US
• Ayan Kar · Portland, US
• Benjamin Orr · Munich, DE

Key dates

• Filing date: Dec 13, 2019
• Grant date: May 28, 2024
• Expiry date: Jul 28, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a semiconductor substrate and a source. The source has a first conductivity type and a first insulator separates the source from the semiconductor substrate. The semiconductor device further comprises a drain. The drain has a second conductivity type that is opposite from the first conductivity type, and a second insulator separates the drain from the semiconductor substrate. In an embodiment, the semiconductor further comprises a semiconductor body between the source and the drain, where the semiconductor body is spaced away from the semiconductor substrate.