Image sensor device and manufacturing method thereof
US11996432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2022 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jul 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes performing a first lithography process using a first pattern of a first photomask to form a first photoresist pattern on a front side of a device substrate; performing a first implantation process using the first pattern as a mask to form first isolation regions in the device substrate; after performing the first implantation process, performing a second lithography process using a second pattern of a second photomask to form a second photoresist pattern on the front side of the device substrate, the second pattern being shifted from the first pattern by a distance less than the first pitch and in the first direction; performing a second implantation process using the second photoresist pattern as a mask to form second isolation regions in the device substrate and spaced apart from the first isolation regions; and forming pixels between the first and second isolation regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.