Fin field-effect transistor and method of forming the same
US11996470B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 26, 2022 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jul 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.