Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature

US11997934B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Zachariah B. Hennighausen · Mount Rainier, US
• Kathleen M. McCreary · Washington, US
• Olaf M. J. van 't Erve · Falls Church, US
• Berend T. Jonker · Waldorf, US

Key dates

• Filing date: Mar 9, 2022
• Grant date: May 28, 2024
• Expiry date: Dec 23, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B2007/24324
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.