Method for polishing semiconductor substrate
US11999027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Aug 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.