Patent · US Active

Method for polishing semiconductor substrate

US11999027B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 8, 2022
Grant dateJun 4, 2024
Priority date
Expiry dateAug 8, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67248
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.