Composition for forming silicon-containing resist underlayer film and patterning process
US12001138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2020 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Jun 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z− represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.