Photoresist layer outgassing prevention
US12002675B2 · kind B2 · utility
1Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.