Method of producing a semiconductor component and semiconductor component

US12002812B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Dirk Meinhold · Dresden, DE
• Steffen Bieselt · Wehlen, DE

Key dates

• Filing date: Feb 23, 2022
• Grant date: Jun 4, 2024
• Expiry date: Apr 23, 2042

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2203/0118
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.