Compact proximity focused image sensor
US12002834B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Mar 3, 2023 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Mar 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.