Kenneth Costello
29Patents
11h-index
21Co-inventors
75Inventor score
Filing activity: Jun 3, 1988 → Mar 3, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7005637B2 | Backside thinning of image array devices | Electricity | 48 | Expired |
| US5684360A | Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas | Electricity | 40 | Expired |
| US6837766B2 | Unitary vacuum tube incorporating high voltage isolation | Electricity | 40 | Expired |
| US6307586A | Electron bombarded active pixel sensor camera incorporating gain control | Electricity | 39 | Expired |
| US8975668B2 | Backside-thinned image sensor using Al2 O3 surface passivation | Electricity | 36 | Active |
| US5374826A | Hybrid photomultiplier tube with high sensitivity | Electricity | 30 | Expired |
| US5047821A | Transferred electron III-V semiconductor photocathode | Electricity | 23 | Expired |
| US5932966A | Electron sources utilizing patterned negative electron affinity photocathodes | Electricity | 17 | Expired |
| US5268612A | Feedback limited microchannel plate | Electricity | 13 | Expired |
| US5326978A | Focused electron-bombarded detector | Electricity | 12 | Expired |
| US5391101A | Method of manufacturing a feedback limited microchannel plate | Electricity | 11 | Expired |
| US7042060B2 | Backside thinning of image array devices | Electricity | 10 | Expired |
| US5912500A | Integrated photocathode | Electricity | 10 | Expired |
| US4929867A | Two stage light converting vacuum tube | Electricity | 6 | Expired |
| US6507147B1 | Unitary vacuum tube incorporating high voltage isolation | Electricity | 5 | Expired |
| US7325715B2 | Unitary vacuum tube incorporating high voltage isolation | Electricity | 4 | Expired |
| US7012328B2 | Semiconductor die attachment for high vacuum tubes | Electricity | 4 | Expired |
| US8698925B2 | Collimator bonding structure and method | Emerging Cross-Sectional Technologies | 3 | Active |
| US7479686B2 | Backside imaging through a doped layer | Electricity | 3 | Active |
| US6969839B2 | Backthinned CMOS sensor with low fixed pattern noise | Electricity | 3 | Expired |
| US9734977B2 | Image intensifier with indexed compliant anode assembly | Electricity | 3 | Active |
| US7607560B2 | Semiconductor die attachment for high vacuum tubes | Electricity | 3 | Active |
| US6943425B2 | Wavelength extension for backthinned silicon image arrays | Electricity | 1 | Expired |
| US7608533B2 | Semiconductor die attachment for high vacuum tubes | Electricity | 1 | Active |
| US11621289B2 | Compact proximity focused image sensor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.