Microelectronic devices with nitrogen-rich insulative structures
US12004346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Aug 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.