Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
US12006591B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Sep 23, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Jun 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm−1 at a wavelength in a range between about 400 nm to about 800 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.