Gary E. Ruland
9Patents
2h-index
11Co-inventors
40Inventor score
Filing activity: Apr 22, 2013 → Mar 1, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9090989B2 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Electricity | 4 | Active |
| US8741413B2 | Large diameter, high quality SiC single crystals, method and apparatus | Emerging Cross-Sectional Technologies | 3 | Active |
| USRE46315E1 | Large diameter, high quality SiC single crystals, method and apparatus | General | 2 | Active |
| US10793972B1 | High quality silicon carbide crystals and method of making the same | Chemistry; Metallurgy | 1 | Active |
| US9322110B2 | Vanadium doped SiC single crystals and method thereof | Chemistry; Metallurgy | 1 | Active |
| US12006591B2 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | Electricity | 0 | Active |
| US12060650B2 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | Electricity | 0 | Active |
| USRE48378E1 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | General | 0 | Active |
| US9388509B2 | Method for synthesizing ultrahigh-purity silicon carbide | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.