Memory device and memory device module
US12009282B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2021 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Mar 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/1094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device includes: a wiring substrate including a multilevel wiring layer and first and second surfaces at opposite sides; a control element embedded in the wiring substrate and having first and second element surfaces at opposite sides, with multiple electrode pads connected to the multilevel wiring layer at the first element surface; a first heat dissipation member at a region of the first surface overlapping the control element; a heat dissipation structure facing the second element surface and exposed at the second surface; and at least one memory element connected with the multilevel wiring layer at a first surface region not overlapping the control element. The multilevel wiring layer includes a signal pattern electrically connecting the control element with the memory element or the external connection terminal, and a heat dissipation conductor pattern forming a heat dissipation path between the control element and the first heat dissipation member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.