Patent · US Active

Fabricating wafers with electrical contacts on a surface parallel to an active surface

US12009352B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Illumina, Inc. · US

Inventors

Arvin Emadi · San Jose, US
Jon Aday · Gilbert, US
Ali Agah · San Diego, US
Arnaud Rival · St-Estève, FR

Key dates

Filing date	Sep 16, 2020
Grant date	Jun 11, 2024
Priority date	—
Expiry date	Mar 15, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/97
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Provided herein include various examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include obtaining a first carrier bonded to an upper surface of the silicon wafer. This wafer includes through silicon vias (TSVs) extended through openings in a passivation stack, with electrical contacts coupled to portions of the TSVs exposed through these openings. The method may include de-bonding the first carrier from the upper surface of the silicon wafer. The method may include dicing the silicon wafer into subsections comprising dies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.