Patent · US Active

Semiconductor laser and production method for a semiconductor laser

US12009632B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Muhammad Ali · Dublin, IE
Harald König · Bernhardswald, DE
Sven Gerhard · Alteglofsheim, DE
Alfred Lell · Maxhütte-Haidhof, DE

Key dates

Filing date	Oct 4, 2019
Grant date	Jun 11, 2024
Priority date	—
Expiry date	May 20, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/166
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.