Imaging devices with gated time-of-flight pixels with fast charge transfer
US12010449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2020 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel array includes a plurality of pixels. Each pixel includes a photoelectric conversion region that converts incident light into electric charge, and a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view. The charge transfer section includes a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region, and a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.