Dielectric layer, interconnection structure using the same, and manufacturing method thereof
US12014919B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 11, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Oct 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.