Patent · US Active

Semiconductor devices comprising a radar semiconductor chip and associated production methods

US12014998B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ernst Seler · Munich, DE
Markus Lang · Munich, DE
Maciej Wojnowski · Munich, DE

Key dates

Filing date	May 5, 2023
Grant date	Jun 18, 2024
Priority date	—
Expiry date	May 5, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01Q21/065
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.