Carbon, nitrogen and/or fluorine co-implants for low resistance transistors
US12015057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2021 |
| Grant date | Jun 18, 2024 |
| Priority date | — |
| Expiry date | Nov 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including drain extended metal oxide semiconductor field effect transistor (MOSFET) includes a source region and a drain region each having a first dopant type spaced apart along a surface of a semiconductor material having a second opposite conductivity type. A gate electrode over the semiconductor material surface between the source region and the drain region. A diffusion suppression implant region in the semiconductor material extends from the source region under the gate electrode. The diffusion suppression implant region includes a body region having the second opposite conductivity type and comprises at least one of carbon, nitrogen, and fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.