Method of using high density plasma chemical vapor deposition chamber
US12020905B2 · kind B2 · utility
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64References
20Claims
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Key dates
| Filing date | May 9, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.