Photoresist coating method
US12020932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Sep 19, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a photoresist coating method, which comprises the following steps: providing a wafer with a pattern on the wafer, placing the wafer on a spinner, injecting a photoresist on a central region of the wafer from a nozzle, and carrying out a spin coating step, the spin coating step comprises: turning on the spinner to rotate the spinner to a first rotation speed, and raising the first rotation speed to a second rotation speed, and performing a plurality of brakes during the process of maintaining the second rotation speed, so that the second rotation speed instantly drops to a third rotation speed, and then rises to the second rotation speed again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.