Back surface incident type semiconductor photo detection element
US12021104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions constituting pn junctions with the first semiconductor region. The semiconductor substrate includes the plurality of second semiconductor in a side of the second main surface. Each of the plurality of second semiconductor regions includes a first region including a textured surface, and a second region including no textured surface. A thickness of the first region at a deepest position of recesses of the textured surface is smaller than a distance between a surface of the second region and the deepest position in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.