High selectivity etching with germanium-containing gases
US12021125B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 16, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Feb 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure describes a method includes forming a fin structure including a fin bottom portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer and a second semiconductor layer, in which the first semiconductor layer includes germanium. The method further includes etching the fin structure to form an opening, delivering a primary etchant and a germanium-containing gas to the fin structure through the opening, and etching a portion of the second semiconductor layer in the opening with the primary etchant and the germanium-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.