Semiconductor arrangement with an integrated temperature sensor

US12021139B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Adrian Finney · Villach, AT
• Norbert Krischke · Munich, DE
• Mathias Racki · Markt Indersdorf, DE

Key dates

• Filing date: Dec 14, 2020
• Grant date: Jun 25, 2024
• Expiry date: Oct 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/615
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 MΩ.