Semiconductor structure and method of forming thereof
US12021140B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 28, 2023 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer and contacting the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.