Multi-threshold voltage devices and associated techniques and configurations
US12021141B2 · kind B2 · utility
0Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Dec 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.