Inventor · Colorado Springs, CO, US

Ian R. Post

24Patents
8h-index
16Co-inventors
72Inventor score

Filing activity: Dec 20, 1993 → Jun 28, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6368931B1 Thin tensile layers in shallow trench isolation and method of making same Electricity 149 Expired
US7226843B2 Indium-boron dual halo MOSFET Electricity 128 Expired
US5561073A Method of fabricating an isolation trench for analog bipolar devices in harsh environments Electricity 26 Expired
US7541239B2 Selective spacer formation on transistors of different classes on the same device Electricity 22 Active
US7943468B2 Penetrating implant for forming a semiconductor device Emerging Cross-Sectional Technologies 17 Active
US6586294B1 Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Electricity 12 Expired
US6627506B2 Thin tensile layers in shallow trench isolation and method of making same Electricity 12 Expired
US6693331B2 Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation Electricity 9 Expired
US9219155B2 Multi-threshold voltage devices and associated techniques and configurations Electricity 8 Active
US6803285B2 Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operation Electricity 6 Expired
US5565370A Method of enhancing the current gain of bipolar junction transistors Emerging Cross-Sectional Technologies 6 Expired
US5420050A Method of enhancing the current gain of bipolar junction transistors Emerging Cross-Sectional Technologies 5 Expired
US6717221B2 Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Electricity 2 Expired
US7560780B2 Active region spacer for semiconductor devices and method to form the same Electricity 2 Active
US6979609B2 Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Electricity 2 Expired
US8174060B2 Selective spacer formation on transistors of different classes on the same device Electricity 2 Active
US5670394A Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source Emerging Cross-Sectional Technologies 1 Expired
US9761713B2 Multi-threshold voltage devices and associated techniques and configurations Electricity 1 Active
US8154067B2 Selective spacer formation on transistors of different classes on the same device Electricity 1 Active
US8426927B2 Penetrating implant for forming a semiconductor device Emerging Cross-Sectional Technologies 1 Active
US11437511B2 Multi-threshold voltage devices and associated techniques and configurations Electricity 0 Active
US12021141B2 Multi-threshold voltage devices and associated techniques and configurations Electricity 0 Active
US10573747B2 Multi-threshold voltage devices and associated techniques and configurations Electricity 0 Active
US8741720B2 Penetrating implant for forming a semiconductor device Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.