Diode laser and method for operating a diode laser

US12021351B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Harald König · Bernhardswald, DE
• Bernhard Stojetz · Wiesent, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Muhammad Ali · Dublin, IE

Key dates

• Filing date: Nov 7, 2019
• Grant date: Jun 25, 2024
• Expiry date: Jun 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/04254
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than |ΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individu…