Microelectronic devices including memory cell structures, and related methods and electronic systems
US12022647B2 · kind B2 · utility
0Cited by
4References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | May 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.