Local contacts of three-dimensional memory devices and methods for forming the same
US12022656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2021 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a 3D memory device is disclosed. A channel structure extending vertically through a dielectric stack including interleaved sacrificial layers and dielectric layers above a substrate is formed. A sacrificial plug above and in contact with the channel structure is formed. A slit opening extending vertically through the dielectric stack is formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A first contact portion is formed in the slit opening. The sacrificial plug is removed after forming the first contact portion to expose the channel structure. A channel local contact above and in contact with the channel structure, and a second contact portion above the first contact portion in the slit opening are simultaneously formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.