Method of processing substrate
US12024777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate. An embodiment of a substrate processing method according to the present disclosure comprises the steps of: carrying a substrate into a first chamber; a first pressurizing step increasing the pressure in the first chamber so that the pressure in the first chamber reaches a first high-pressure that is higher than the normal pressure; a first depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a second high-pressure that is lower than the first high-pressure and equal to or higher than the normal pressure; a first pressurizing/depressurizing repeating step performing the first pressurizing step and the first depressurizing step repeatedly at a predetermined number of times; and a second depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a first low-pressure that is lower than the normal pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.