Methods for forming single crystal silicon ingots with improved resistivity control
US12024789B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Oct 15, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.