Reduced optical absorption for silicon carbide crystalline materials
US12024794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Dec 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/826
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.