Patent · US Active

Reduced optical absorption for silicon carbide crystalline materials

US12024794B2 · kind B2 · utility

1Cited by
36References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 17, 2021
Grant dateJul 2, 2024
Priority date
Expiry dateDec 21, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/826
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.