Substrate processing method
US12027371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Feb 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K77/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.