Composite deep trench isolation structure in an image sensor

US12027554B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Che-Wei Yang · New Taipei, TW
• Sheng-Chan Li · Tainan, TW
• Tsun-Kai Tsao · Tainan, TW
• Chih-Cheng Shih
• Sheng-Chau Chen · Tainan, TW
• Cheng-Yuan Tsai · Taipei, TW

Key dates

• Filing date: Jan 8, 2021
• Grant date: Jul 2, 2024
• Expiry date: Apr 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.