Semiconductor device
US12027586B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Jul 5, 2023 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Jul 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.