Semiconductor device and method for manufacturing the same

US12027615B2 · kind B2 · utility

Assignee

• INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. · CN

Inventors

• Ronghui Hao · Zhuhai, CN
• Fu CHEN · Suzhou, CN
• Chuan He · Columbus, US
• King-Yuen Wong · Issaquah, US

Key dates

• Filing date: Jan 8, 2021
• Grant date: Jul 2, 2024
• Expiry date: Nov 6, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, a pair of S/D electrodes, and a gate electrode. The first nitride-based semiconductor layer is disposed over the buffer and forms a first interface with the buffer. The shield layer includes a first isolation compound and is interposed between the buffer and the first nitride-based semiconductor layer. The first isolation compound has a bandgap greater than a bandgap of the buffer and greater than a bandgap of the first nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.