Patent · US Active

Semiconductor device

US12029138B2 · kind B2 · utility

0Cited by
1References
6Claims
0Family size

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Key dates

Filing dateMay 24, 2023
Grant dateJul 2, 2024
Priority date
Expiry dateMay 24, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/60

Abstract

A semiconductor device includes an array region defined on a substrate, a ring of dummy pattern surrounding the array region, and a gap between the array region and the ring of dummy pattern. Preferably, the ring of dummy pattern further includes a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region and a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.