Semiconductor device
US12029138B2 · kind B2 · utility
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1References
6Claims
0Family size
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Key dates
| Filing date | May 24, 2023 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | May 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
A semiconductor device includes an array region defined on a substrate, a ring of dummy pattern surrounding the array region, and a gap between the array region and the ring of dummy pattern. Preferably, the ring of dummy pattern further includes a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region and a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.