Encapsulation layer for chalcogenide material
US12029144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Oct 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/24
Abstract
The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-χ) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-χ metal precursor and an oxygen precursor comprising O2, wherein the low-χ metal of the metal precursor has an electronegativity of 1.6 or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.