Doped SiC and SiOC compositions and Methods

US12030819B2 · kind B2 · utility

Assignee

• Pallidus, Inc. · US

Inventors

• Douglas M. Dukes · Troy, US
• Ashish P. Diwanji · Zanesville, US
• Andrew R. Hopkins · Sylvania, US
• Walter J. Sherwood · Ballston Lake, US
• Glenn Sandgren · Ambler, US
• Mark S. Land · Houston, US
• Brian L. Benac · Hadley, US

Key dates

• Filing date: Jul 4, 2021
• Grant date: Jul 9, 2024
• Expiry date: Jul 4, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C08G77/80
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. Doped SiOC and SiC materials for providing semiconductor properties to SiC wafers, including p- and n-type properties.