Concept for silicon carbide power devices

US12034001B2 · kind B2 · utility

Assignee

• II-VI ADVANCED MATERIALS, LLC · US

Inventors

• Adolf Schöner · Hässelby, SE
• Nicolas Thierry-Jebali · Stockholm, SE
• Christian Vieider · Sollentuna, SE
• Sergey Reshanov · Upplands Väsby, SE
• Hossein Elahipanah · Sollentuna, SE
• Wlodzimierz Kaplan · Sollentuna, SE

Key dates

• Filing date: Apr 4, 2023
• Grant date: Jul 9, 2024
• Expiry date: Apr 4, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid (4) with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.