Semiconductor device structures and methods of manufacturing the same
US12034070B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Mar 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first layer and a second layer. The first layer is disposed on and in contact with the substrate. The first layer includes AlX1Ga(1-X1)N, wherein 0.5≤X1<1. The second layer is disposed on and in contact with the first layer. The second layer includes Al, Ga and N.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.