Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers

US12034085B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Harald Gossner · Riemerling, DE
• Peter Baumgartner · Munich, DE
• Uwe Hodel · Munich, DE
• Domagoj Siprak · Munich, DE
• Stephan Leuschner · Lübeck, DE
• Richard Geiger · Munich, DE
• Han Wui Then · Portland, US
• Marko Radosavljevic · Portland, US
• Sansaptak Dasgupta · Hillsboro, US

Key dates

• Filing date: Jun 23, 2022
• Grant date: Jul 9, 2024
• Expiry date: Jun 23, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.